STP10N60M2
Производится
Увеличить
Краткое описание:
600V 7.5A N-CH MOSFET TO-220 Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. Offers a low 0.55 Ohm typical drain-source on-resistance, with a maximum of 600mR. Designed for through-hole mounting in a TO-220 package, this component operates from -55°C to 150°C with a maximum power dissipation of 85W. Key switching characteristics include an 8.8ns turn-on delay and a 13.2ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 13.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 400pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32.5ns |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 560mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 600mR |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
