STP10NM50N
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Краткое описание:
500V 7A N-CH Power MOSFET TO-220 630mR
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 7A continuous drain current. This through-hole component offers a low 630mΩ drain-source on-resistance and 70W power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-220AB form factor. Key electrical characteristics include a 3V threshold voltage and fast switching times with a 7.8ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 630mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 450pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 630mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 630mR |
| Drain to Source Breakdown Voltage | 500V |
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