STP10NM60ND
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Краткое описание:
600V 8A N-CH MOSFET TO-220 600mR FDmesh II
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source voltage and 8A continuous drain current. Offers low on-resistance with a maximum of 470mΩ at 10Vgs. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 70W and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 9.2ns turn-on delay and 9.8ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | FDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 9.8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 577pF |
| Power Dissipation | 70W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 470mR |
| Drain to Source Breakdown Voltage | 650V |
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