STP110N55F6

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STP110N55F6 - Stmicroelectronics
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Краткое описание: N-CHANNEL MOSFET, 55V, 110A, TO-220, Through Hole
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STP110N55F6 is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 150W and a continuous drain current of 110A. The device is packaged in a TO-220 case and is suitable for through-hole mounting. The STP110N55F6 is compliant with RoHS regulations and is lead-free.
RoHS Compliant
Mount Through Hole
Series DeepGATE™, STripFET™ VI
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 5.2mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 8.35nF
Power Dissipation 150W
Radiation Hardening No
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Drain to Source Voltage (Vdss) 55V
Drain to Source Breakdown Voltage 55V

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