STP12N65M5

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STP12N65M5 - Stmicroelectronics
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Краткое описание: 650V 8.5A N-CH MOSFET TO-220 390mR
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 8.5A continuous drain current. This MDmesh M5 series component offers a low 0.39 Ohm typical drain-to-source resistance and 70W maximum power dissipation. Packaged in a TO-220 through-hole mount, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 22.6ns and fall time of 23.4ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 23.4ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 430mR
Nominal Vgs 4V
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 900pF
Power Dissipation 70W
Turn-On Delay Time 22.6ns
Radiation Hardening No
Turn-Off Delay Time 15.6ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 390mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 8.5A
Drain to Source Voltage (Vdss) 650V
Drain to Source Breakdown Voltage 650V

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