STP12NK80Z
Производится
Увеличить
Краткое описание:
800V 10.5A N-Channel MOSFET TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 10.5A continuous drain current. This component offers a low 0.65 Ohm (750mR) drain-source on-resistance and 190W power dissipation. Designed for through-hole mounting in a TO-220 package, it includes Zener protection and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 20ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-220 |
| Current Rating | 10.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 2.62nF |
| Power Dissipation | 190W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 750mR |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
