STP13NM50N

Снят с производства
STP13NM50N - Stmicroelectronics
Увеличить
Краткое описание: N-CHANNEL MOSFET, 500V, 12A, 320mR, TO-220AB, -55°C to 150°C
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STP13NM50N is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 12A. The device has a maximum power dissipation of 100W and a drain to source on resistance of 320mR. It is packaged in a TO-220AB flange mount package and is compliant with RoHS regulations.
RoHS Compliant
Mount Through Hole
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 320mR
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 960pF
Power Dissipation 100W
Turn-Off Delay Time 40ns
Max Power Dissipation 100W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 320mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 320mR
Drain to Source Breakdown Voltage 500V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.