STP14NM65N

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STP14NM65N - Stmicroelectronics
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Краткое описание: 650V 12A N-CH MOSFET TO-220 380mR
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a 125W maximum power dissipation and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Series MDmesh™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 380mR
Nominal Vgs 3V
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.3nF
Power Dissipation 125W
Turn-Off Delay Time 55ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 380mR
Drain to Source Breakdown Voltage 650V