STP150N10F7
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Краткое описание:
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package
Дополнительная информация
This N-channel power MOSFET is rated for 100 V drain-source voltage and 110 A continuous drain current. It features STripFET F7 trench-gate technology with 0.0036 Ω typical and 0.0042 Ω maximum on-resistance at VGS = 10 V. The device is housed in a TO-220 package and supports fast switching with 117 nC typical total gate charge, 8115 pF typical input capacitance, and 33 ns typical turn-on delay time. It is specified for operation from -55 °C to 175 °C junction temperature and provides 495 mJ single-pulse avalanche energy.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.2mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 8.115nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 33ns |
| Turn-Off Delay Time | 72ns |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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