STP150NF04

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STP150NF04 - Stmicroelectronics
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Краткое описание: N-CH Power MOSFET 40V 80A TO-220AB
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET, 40V drain-source voltage, 80A continuous drain current, and 7mΩ maximum drain-source resistance at 10V. Features a TO-220AB through-hole package with 3 pins and a tab, suitable for automotive applications. Offers a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive Yes
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220AB
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 1.9
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.15(Max)
Package Length (mm) 10.4(Max)
Radiation Hardening No
Seated Plane Height (mm) 19.68(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 300000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 118nC
Typical Gate Charge @ Vgs 118@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 40V
Maximum Gate Threshold Voltage 4V
Maximum Drain Source Resistance 7@10VmOhm
Typical Input Capacitance @ Vds 3650@25VpF
Maximum Continuous Drain Current 80A

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