STP150NF55

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STP150NF55 - Stmicroelectronics
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Краткое описание: 55V 120A N-CH MOSFET TO-220 6mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 55V drain-source breakdown voltage and a low 6mΩ drain-source on-resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 300W, suitable for through-hole mounting in a TO-220AB package. Key switching characteristics include a 35ns turn-on delay and 80ns fall time, with an input capacitance of 4.4nF. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for demanding applications.
RoHS Compliant
Mount Through Hole
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 80ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 6mR
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 4.4nF
Power Dissipation 300W
Turn-On Delay Time 35ns
Radiation Hardening No
Turn-Off Delay Time 140ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 55V
Drain-source On Resistance-Max 6MR
Drain to Source Breakdown Voltage 55V

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