N-channel power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. This component offers a low 0.27 Ohm typical drain-source on-resistance and operates within a -55°C to 150°C temperature range. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 125W and includes fast switching characteristics with a 28ns fall time. RoHS compliant and lead-free, this FDmesh™ II series MOSFET is suitable for demanding power applications.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.6mm |
| Height |
15.75mm |
| Length |
10.4mm |
| Series |
FDmesh™ II |
| Polarity |
N-CHANNEL |
| Fall Time |
28ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
299mR |
| Package/Case |
TO-220 |
| RoHS Compliant |
Yes |
| Input Capacitance |
1.25nF |
| Power Dissipation |
125W |
| Threshold Voltage |
4V |
| Turn-On Delay Time |
17ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
47ns |
| Reach SVHC Compliant |
No |
| Max Power Dissipation |
125W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
299mR |
| Gate to Source Voltage (Vgs) |
25V |
| Continuous Drain Current (ID) |
14A |
| Drain to Source Voltage (Vdss) |
600V |
| Drain-source On Resistance-Max |
299mR |
| Drain to Source Breakdown Voltage |
600V |