STP15NM60ND

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STP15NM60ND - Stmicroelectronics
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Краткое описание: 600V 14A N-CH MOSFET TO-220 299mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. This component offers a low 0.27 Ohm typical drain-source on-resistance and operates within a -55°C to 150°C temperature range. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 125W and includes fast switching characteristics with a 28ns fall time. RoHS compliant and lead-free, this FDmesh™ II series MOSFET is suitable for demanding power applications.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 28ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 299mR
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 1.25nF
Power Dissipation 125W
Threshold Voltage 4V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 47ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 299mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 299mR
Drain to Source Breakdown Voltage 600V