STP15NM65N
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Краткое описание:
650V 12A N-CH MOSFET TO-220
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.35 Ohm typical drain-source on-resistance, with a maximum of 380mR. Designed for through-hole mounting in a TO-220 package, this component boasts a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 26ns fall time and 14ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 983pF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 55.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 350mR |
| Drain to Source Breakdown Voltage | 650V |
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