STP185N55F3

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STP185N55F3 - Stmicroelectronics
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Краткое описание: N-CHANNEL MOSFET 55V 120A 3.8mR 330W TO-220-3
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STP185N55F3 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum drain to source breakdown voltage of 55V and a continuous drain current of 120A. The device has a maximum power dissipation of 330W and a drain to source resistance of 3.5mR. It is available in a TO-220-3 package and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Series STripFET™
Polarity N-CHANNEL
Fall Time 50ns
Packaging Rail/Tube
Rds On Max 3.8mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 6.8nF
Power Dissipation 330W
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 110ns
Max Power Dissipation 330W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 55V
Drain to Source Breakdown Voltage 55V