STP18NM60ND
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Краткое описание:
600V N-CH MOSFET, 13A, 290mR RdsOn, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 290mΩ maximum drain-source on-resistance and 130W power dissipation. Designed with a fast diode, it exhibits 18ns fall time, 13ns turn-off delay, and 55ns turn-on delay. Housed in a TO-220 package, this RoHS compliant device operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | FDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.03nF |
| Power Dissipation | 130W |
| Turn-On Delay Time | 55ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 290mR |
| Drain to Source Breakdown Voltage | 650V |
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