STP200N6F3

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STP200N6F3 - Stmicroelectronics
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Краткое описание: N-CHANNEL 60V 120A TO-220AB Through Hole Power Transistor
Производитель Stmicroelectronics
Категория Транзисторы
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

The STP200N6F3 is a high-power N-channel power transistor with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 330W and a continuous drain current of 120A. The transistor is packaged in a TO-220AB case and is mounted through a hole. It is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Series STripFET™
Polarity N-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.9mR
Package/Case TO-220AB
RoHS Compliant Yes
Input Capacitance 6.8nF
Power Dissipation 330W
Turn-On Delay Time 26ns
Radiation Hardening No
Turn-Off Delay Time 86ns
Max Power Dissipation 330W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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