STP20N65M5
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Краткое описание:
650V N-CH MOSFET 18A 190mR TO-220 Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 18A continuous drain current. Offers low on-resistance with a maximum of 190mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 130W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a typical fall time of 7.5ns and turn-on/off delay times of 43ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 7.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.345nF |
| Power Dissipation | 130W |
| Turn-On Delay Time | 43ns |
| Turn-Off Delay Time | 43ns |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 168MR |
| Drain to Source Breakdown Voltage | 650V |
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