STP20NF20

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STP20NF20 - Stmicroelectronics
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Краткое описание: 200V 18A N-CH MOSFET TO-220, 125mR Rds(on)
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.10 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 40ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 125mR
Package/Case TO-220
Current Rating 18A
RoHS Compliant Yes
DC Rated Voltage 200V
Package Quantity 1000
Input Capacitance 940pF
Power Dissipation 25W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 110W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 125mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 200V
Drain-source On Resistance-Max 125mR
Drain to Source Breakdown Voltage 200V

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