STP21NM50N
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Краткое описание:
500V 18A N-CH MOSFET, 190mR, TO-220 Power Transistor
Дополнительная информация
N-Channel Power MOSFET, TO-220 package, featuring 500V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.19 ohm Rds On (max) and 140W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 22ns and fall time of 30ns. RoHS compliant and designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-220 |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 1.95nF |
| Power Dissipation | 140W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
