STP23NM60N

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STP23NM60N - Stmicroelectronics
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Краткое описание: N-Channel MOSFET 600V 19A TO-220AB Through Hole
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STP23NM60N is a 600V N-Channel MOSFET with a continuous drain current of 19A. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 180 milliohms. The device has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 150W. It is packaged in a TO-220AB package and is mounted through a hole. The STP23NM60N is RoHS compliant and part of the MDmesh II series.
RoHS Compliant
Mount Through Hole
Series MDmesh™ II
Polarity N-CHANNEL
Fall Time 36ns
Packaging Rail/Tube
Rds On Max 180mR
Package/Case TO-220AB
RoHS Compliant Yes
Input Capacitance 2.05nF
Power Dissipation 150W
Turn-Off Delay Time 90ns
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 180mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 19A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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