STP24NF10

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STP24NF10 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 100V 26A 60mR TO-220 Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 100V Drain-Source Breakdown Voltage and 26A Continuous Drain Current. This TO-220 package MOSFET offers a low 55mΩ Drain-Source On-Resistance, 85W Power Dissipation, and a threshold voltage of 3V. Designed with STripFET™ II technology, it boasts fast switching characteristics with a 20ns fall time and 60ns turn-on delay. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant component is suitable for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 60mR
Package/Case TO-220
Current Rating 26A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Input Capacitance 870pF
Power Dissipation 85W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 60ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Max Power Dissipation 85W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 55mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 26A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 60mR
Drain to Source Breakdown Voltage 100V

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