STP24NM60N

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STP24NM60N - Stmicroelectronics
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Краткое описание: 600V 17A N-CH MOSFET TO-220 168mR
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, MDmesh™ II series, featuring 600V drain-source voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 190mΩ at 10Vgs. Packaged in a TO-220 through-hole mount, this component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 11.5ns turn-on delay and 37ns fall time. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 37ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 1.4nF
Power Dissipation 120W
Threshold Voltage 3V
Turn-On Delay Time 11.5ns
Radiation Hardening No
Turn-Off Delay Time 73ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 168mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 190MR
Drain to Source Breakdown Voltage 650V

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