STP260N6F6
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Краткое описание:
N-Ch MOSFET, 60V, 120A, 2.4mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. Offers a low 2.4mΩ drain-source on-resistance at a 10V gate-source voltage. This TO-220 packaged component boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 31.4ns turn-on delay and 62.6ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 62.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 11.4nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 31.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 144.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 75V |
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