STP26NM60N
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Краткое описание:
600V N-Channel MOSFET, 20A, 165mR, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This device offers a low 165mΩ maximum drain-source on-resistance and 140W power dissipation. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 165mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.8nF |
| Power Dissipation | 140W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 600V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 85ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 165mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165MR |
| Drain to Source Breakdown Voltage | 600V |
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