STP270N8F7

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STP270N8F7 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 80V 180A 2.1mR TO-220 Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 80V drain-source breakdown voltage and 2.1 mOhm typical drain-source on-resistance. This component offers a continuous drain current of 180A and a maximum power dissipation of 315W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 42ns fall time, 98ns turn-off delay, and 56ns turn-on delay, with an input capacitance of 13.6nF. RoHS compliant and lead-free, this MOSFET is part of the STripFET VII series.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series DeepGATE™, STripFET™ VII
Polarity N-CHANNEL
Fall Time 42ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 2.5mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 13.6nF
Threshold Voltage 4V
Turn-On Delay Time 56ns
Radiation Hardening No
Turn-Off Delay Time 98ns
Reach SVHC Compliant No
Max Power Dissipation 315W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 80V
Drain-source On Resistance-Max 2.1MR
Drain to Source Breakdown Voltage 80V

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