STP2N62K3

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STP2N62K3 - Stmicroelectronics
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Краткое описание: 620V 2.2A N-CH MOSFET TO-220 3.6R
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 620V drain-source breakdown voltage and 2.2A continuous drain current. Offers a maximum drain-source on-resistance of 3.6 ohms. This through-hole component is housed in a TO-220 package with a maximum power dissipation of 45W. Key switching characteristics include an 8ns turn-on delay and a 22ns fall time.
RoHS Not CompliantNo
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 22ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.6R
Package/Case TO-220
RoHS Compliant No
Package Quantity 50
Input Capacitance 340pF
Power Dissipation 45W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 21ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.2A
Drain to Source Voltage (Vdss) 620V
Drain-source On Resistance-Max 3.6R
Drain to Source Breakdown Voltage 620V

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