STP2NK60Z

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STP2NK60Z - Stmicroelectronics
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Краткое описание: 600V 1.4A N-CH MOSFET TO-220 8R Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL POWER MOSFET, TO-220 package, featuring 600V drain-source breakdown voltage and 1.4A continuous drain current. This component offers a low 8-ohm drain-source on-resistance and 45W maximum power dissipation. With a 3.75V threshold voltage, it exhibits fast switching characteristics including 8ns turn-on delay and 22ns turn-off delay. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant device is designed for through-hole mounting.
RoHS Compliant
Mount Through Hole
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 55ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 8R
Package/Case TO-220
Current Rating 1.4A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 50
Input Capacitance 170pF
Power Dissipation 45W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 1.4A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 8R
Drain to Source Breakdown Voltage 600V

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