STP2NK90Z
Производится
Увеличить
Краткое описание:
900V N-Channel MOSFET, 2.1A, 5 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 2.1A continuous drain current. Offers a low 5 Ohm typical drain-source on-resistance and 70W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component has a gate-source voltage rating of 30V and a threshold voltage of 3.75V. Key switching parameters include a 21ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6.5R |
| Package/Case | TO-220 |
| Current Rating | 2.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 485pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 5R |
| Drain to Source Breakdown Voltage | 900V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
