STP30NF10

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STP30NF10 - Stmicroelectronics
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Краткое описание: 100V 35A N-CH MOSFET TO-220 38mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-CHANNEL MOSFET, STripFET™ II series, featuring 100V drain-source breakdown voltage and 35A continuous drain current. Offers low 38mΩ drain-source on-resistance at 100V, with a maximum of 45mΩ. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 115W and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include 1.18nF input capacitance, 15ns turn-on delay, and 45ns turn-off delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 45mR
Package/Case TO-220
Current Rating 35A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Input Capacitance 1.18nF
Power Dissipation 115W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Max Power Dissipation 115W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 38mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 45MR
Drain to Source Breakdown Voltage 100V

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