STP30NM60ND

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STP30NM60ND - Stmicroelectronics
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Краткое описание: N-Channel MOSFET 600V 25A TO-220AB Through Hole
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STP30NM60ND is a 600V N-channel MOSFET with a continuous drain current of 25A. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 130mR. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is packaged in a TO-220AB flange mount with a rail/Tube packaging style.
RoHS Not Compliant
Mount Through Hole
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 75ns
Packaging Rail/Tube
Rds On Max 130mR
Package/Case TO-220AB
RoHS Compliant No
Input Capacitance 2.8nF
Power Dissipation 190W
Turn-Off Delay Time 110ns
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 130mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 25A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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