STP33N60DM2
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Краткое описание:
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
Дополнительная информация
High-voltage N-channel Power MOSFET uses MDmesh DM2 fast-recovery diode technology for switching applications. The device is rated for 600 V drain-source breakdown voltage, 24 A continuous drain current at 25 °C case temperature, and 130 mΩ maximum on-resistance at 10 V gate drive. It provides low gate charge, low input capacitance, a fast-recovery body diode, 100% avalanche testing, and zener gate protection. The TO-220 package is supplied in tube packing and operates over a -55 °C to 150 °C junction temperature range.
| REACH | not_compliant |
| Eccn Code | EAR99 |
| Military Spec | False |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Max Operating Temperature | 150 |
| Min Operating Temperature | -55 |
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