STP34NM60N
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Краткое описание:
600V N-CH MOSFET, 29A, 92mR Rds On, TO-220
Дополнительная информация
N-channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 31.5A continuous drain current, and 0.092 Ohm typical drain-source on-resistance. Features a TO-220 package for through-hole mounting, with a maximum power dissipation of 210W. Operates across a temperature range of -55°C to 150°C, offering fast switching speeds with a 17ns turn-on delay and 70ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 105mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 2.722nF |
| Power Dissipation | 210W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 106ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 210W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 92mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 105MR |
| Drain to Source Breakdown Voltage | 600V |
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