STP34NM60ND

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STP34NM60ND - Stmicroelectronics
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Краткое описание: 600V 29A N-CH MOSFET TO-220 110mR
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This TO-220 package component offers a low 110mΩ maximum drain-source on-resistance and 190W power dissipation. It includes a fast diode and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 30ns turn-on delay and 61.8ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series FDmesh™ II
Polarity N-CHANNEL
Fall Time 61.8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 110mR
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 2.785nF
Power Dissipation 190W
Threshold Voltage 4V
Turn-On Delay Time 30ns
Radiation Hardening No
Turn-Off Delay Time 111ns
Reach SVHC Compliant No
Max Power Dissipation 190W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 110mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 110MR
Drain to Source Breakdown Voltage 600V

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