STP35NF10
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Краткое описание:
100V 40A N-Ch MOSFET TO-220 35mR Rds(on)
Дополнительная информация
N-Channel MOSFET, TO-220 package, featuring 100V drain-source breakdown voltage and 35mΩ maximum drain-source on-resistance. This power MOSFET offers a continuous drain current of 40A and a maximum power dissipation of 115W. Key electrical characteristics include a 3V threshold voltage, 1.55nF input capacitance, and fast switching times with a 17ns turn-on delay and 15ns fall time. Designed for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35mR |
| Package/Case | TO-220 |
| Current Rating | 40A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 1.55nF |
| Power Dissipation | 115W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 115W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | 100V |
