STP360N4F6

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STP360N4F6 - Stmicroelectronics
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Краткое описание: N-CH Power MOSFET 40V 120A TO-220AB
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Automotive N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 120A continuous drain current. This single-element transistor utilizes STripFET process technology and offers a low drain-source on-resistance of 1.8 mΩ at 10V. Packaged in a TO-220AB through-hole configuration with 3 pins and a tab, it supports a wide operating temperature range from -55°C to 175°C. Maximum power dissipation is rated at 300W.
PCB 3
Tab Tab
ECCN EAR99
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive Yes
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220AB
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 1.9
Package Width (mm) 4.6(Max)
Process Technology STripFET
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.15(Max)
Package Length (mm) 10.4(Max)
Seated Plane Height (mm) 19.68(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 300000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 304nC
Typical Gate Charge @ Vgs 304@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 40V
Maximum Gate Threshold Voltage 4.5V
Maximum Drain Source Resistance 1.8@10VmOhm
Typical Input Capacitance @ Vds 17800@25VpF
Maximum Continuous Drain Current 120A

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