STP3N150

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STP3N150 - Stmicroelectronics
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Краткое описание: N-Channel MOSFET, 1500V, 2.5A, 9 Ohm, TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel PowerMESH™ power MOSFET featuring 1500V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 9 Ohms and a 140W power dissipation. Operating from -50°C to 150°C, it includes a 4V threshold voltage and fast switching times with turn-on delay of 24ns and fall time of 61ns. Packaged in a TO-220 case, this RoHS compliant MOSFET is designed for demanding power applications.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series PowerMESH™
Polarity N-CHANNEL
Fall Time 61ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 9R
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 939pF
Power Dissipation 140W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 24ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Max Power Dissipation 140W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 9R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 1.5kV
Drain-source On Resistance-Max 9R
Drain to Source Breakdown Voltage 1.5kV

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