STP3NK60Z

Производится
STP3NK60Z - Stmicroelectronics
Увеличить
Краткое описание: 600V N-CH MOSFET, 2.4A, 3.6 Ohm, TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET in TO-220 package, featuring 600V drain-source breakdown voltage and 2.4A continuous drain current. Offers a typical drain-source on-resistance of 3.2 Ohms, with a maximum of 3.6 Ohms. Operates with a gate-source voltage up to 30V and a threshold voltage of 3.75V. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 14ns. Rated for 45W maximum power dissipation and supports through-hole mounting. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.6R
Package/Case TO-220
Current Rating 2.4A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 50
Input Capacitance 311pF
Power Dissipation 45W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.4A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 3.6R
Drain to Source Breakdown Voltage 600V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.