STP3NK80Z
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Краткое описание:
800V N-CH MOSFET, 2.5A, 4.5R RdsOn, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 800V drain-source breakdown voltage, 2.5A continuous drain current, and 4.5 Ohm max drain-source on-resistance. Features a TO-220 through-hole package with 70W power dissipation and a max operating temperature of 150°C. Offers fast switching with turn-on delay time of 17ns and fall time of 40ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.5R |
| Package/Case | TO-220 |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 485pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 4.5R |
| Drain to Source Breakdown Voltage | 800V |
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