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Краткое описание:
900V N-CH MOSFET, 3A, 4.8 Ohm, TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 4.8 Ohms and a maximum power dissipation of 90W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220 package. Key switching characteristics include an 18ns turn-on delay and an 18ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.8R |
| Package/Case | TO-220 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 590pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 4.8R |
| Drain to Source Breakdown Voltage | 900V |
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