STP45NF06

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STP45NF06 - Stmicroelectronics
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Краткое описание: 60V N-Ch MOSFET, 38A, 28mR RdsOn, TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 60V drain-source breakdown voltage and 38A continuous drain current. This component offers a low 28mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 80W and operates within a temperature range of -65°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 10ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 28mR
Package/Case TO-220
Current Rating 38A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Input Capacitance 980pF
Power Dissipation 80W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 20ns
Turn-Off Delay Time 28ns
Reach SVHC Compliant No
Max Power Dissipation 80W
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Drain to Source Resistance 28mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 28mR
Drain to Source Breakdown Voltage 60V

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