STP55NF06
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Краткое описание:
60V 50A N-CH MOSFET TO-220 18mR
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This component offers a low 18mΩ drain-source on-resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a -55°C to 175°C temperature range. Key switching characteristics include a 20ns turn-on delay and 36ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 18mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220 |
| Current Rating | 50A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 1.3nF |
| Power Dissipation | 110W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 18mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18mR |
| Drain to Source Breakdown Voltage | 60V |
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