STP55NF06FP
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Краткое описание:
N-Ch MOSFET 60V 50A 18mR TO-220FP
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. Offers low 15mΩ drain-source on-resistance at a nominal Vgs of 3V. Designed for through-hole mounting in a TO-220FP package, with a maximum power dissipation of 30W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 15ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.3mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 18mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220-3 |
| Current Rating | 50A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 1.3nF |
| Power Dissipation | 30W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 18mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18mR |
| Drain to Source Breakdown Voltage | 60V |
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