STP55NF06L

Производится
STP55NF06L - Stmicroelectronics
Увеличить
Краткое описание: N-Ch MOSFET, 60V, 55A, 18mR RdsOn, TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 55A continuous drain current. Offers low 14mΩ typical drain-source on-resistance and 18mΩ maximum. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 95W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with 20ns turn-on and 40ns turn-off delay times.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 18mR
Nominal Vgs 1.7V
Package/Case TO-220
Current Rating 55A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1000
Input Capacitance 1.7nF
Power Dissipation 95W
Threshold Voltage 1.7V
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 95W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 14mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 55A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 18mR
Drain to Source Breakdown Voltage 60V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.