STP5N60M2

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STP5N60M2 - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 3.7A, 1.26 Ohm, TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.26 Ohm typical drain-source resistance. This through-hole component offers a continuous drain current of 3.7A and a maximum power dissipation of 45W. Operating across a wide temperature range from -55°C to 150°C, it utilizes a TO-220 package. Key electrical characteristics include 165pF input capacitance and fast switching times with a 11.8ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™ II Plus
Weight 0.01164oz
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1.4R
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 165pF
Number of Channels 1
Turn-On Delay Time 11.8ns
Radiation Hardening No
Turn-Off Delay Time 70ns
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.26R
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 3.7A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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