STP5N95K3

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STP5N95K3 - Stmicroelectronics
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Краткое описание: 950V 4A N-Channel Power MOSFET TO-220 3.5R
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL POWER MOSFET, TO-220AB package, featuring 950V drain-source breakdown voltage and 4A continuous drain current. Offers a maximum drain-source on-resistance of 3.5 ohms. Operates with a gate-source voltage up to 30V and a threshold voltage of 4V. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 18ns. Maximum power dissipation is 90W, with operating temperatures from -55°C to 150°C. Through-hole mount, RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.5R
Package/Case TO-220
RoHS Compliant Yes
Input Capacitance 460pF
Power Dissipation 90W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4A
Drain to Source Voltage (Vdss) 950V
Drain-source On Resistance-Max 3.5R
Drain to Source Breakdown Voltage 950V