STP5NK100Z

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STP5NK100Z - Stmicroelectronics
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Краткое описание: N-Channel 1kV 3.5A SuperMESH Power MOSFET TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET, 1000V drain-source breakdown voltage, 3.5A continuous drain current, and 3.7 Ohm maximum drain-source on-resistance. This through-hole component features a TO-220 package, 125W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 22.5ns turn-on delay, 19ns fall time, and 51.5ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 3.7R
Package/Case TO-220
Current Rating 3.5A
RoHS Compliant Yes
DC Rated Voltage 1kV
Package Quantity 1000
Input Capacitance 1.154nF
Power Dissipation 125W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 22.5ns
Turn-Off Delay Time 51.5ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.7R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 1kV
Drain-source On Resistance-Max 3.7R
Drain to Source Breakdown Voltage 1kV

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