STP5NK65Z
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Краткое описание:
N-CHANNEL MOSFET 650V 5A 1.8R 85W TO-220 3 PIN
Дополнительная информация
The STP5NK65Z is a 650V N-channel MOSFET with a continuous drain current of 5A and a maximum power dissipation of 85W. It features a drain to source breakdown voltage of 650V and a drain to source resistance of 1.8R. The device is packaged in a TO-220 3 PIN package and is suitable for through hole mounting. The STP5NK65Z operates over a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.8R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 680pF |
| Power Dissipation | 85W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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