STP5NK80Z
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Краткое описание:
800V N-CH MOSFET, 4.3A, 2.4R, TO-220
Дополнительная информация
N-channel SuperMESH Power MOSFET, 800V drain-source breakdown voltage, 4.3A continuous drain current, and 2.4 Ohm maximum drain-source on-resistance. Features a TO-220 package for through-hole mounting, 110W power dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 18ns and fall time of 30ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | PowerMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.4R |
| Package/Case | TO-220 |
| Current Rating | 4.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 50 |
| Input Capacitance | 910pF |
| Power Dissipation | 110W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 2.4R |
| Drain to Source Breakdown Voltage | 800V |
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