STP60NF06

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STP60NF06 - Stmicroelectronics
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Краткое описание: 60V 60A N-CH MOSFET TO-220 16mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET featuring 60V drain-source breakdown voltage and 60A continuous drain current. This TO-220 package component offers a low 16mΩ maximum drain-source on-resistance and 150W power dissipation. Designed for through-hole mounting, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include a 2V threshold voltage, 1.66nF input capacitance, and fast switching times with a 16ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 16mR
Package/Case TO-220
Current Rating 60A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1000
Input Capacitance 1.66nF
Power Dissipation 150W
Threshold Voltage 2V
Turn-On Delay Time 16ns
Dual Supply Voltage 60V
On-State Resistance 16mR
Turn-Off Delay Time 43ns
Reach SVHC Compliant No
Max Power Dissipation 110W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 16mR
Drain to Source Breakdown Voltage 60V

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