STP6NB90

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STP6NB90 - Stmicroelectronics
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Краткое описание: 900V 5.8A 2 Ohm N-Channel Power MOSFET TO-220AB
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET with 900V drain-source breakdown voltage and 5.8A continuous drain current. Features 2 Ohm Rds On, 135W max power dissipation, and TO-220AB through-hole package. Operates from -65°C to 150°C with 1.4nF input capacitance and 15ns fall time.
RoHS Not CompliantNo
Mount Through Hole
Series PowerMESH™
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 2R
Package/Case TO-220AB
Current Rating 5.8A
RoHS Compliant No
DC Rated Voltage 900V
Package Quantity 50
Input Capacitance 1.4nF
Power Dissipation 135W
Turn-On Delay Time 20ns
Radiation Hardening No
Max Power Dissipation 135W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Drain to Source Resistance 2R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.8A
Drain to Source Voltage (Vdss) 900V
Drain to Source Breakdown Voltage 900V

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